INVESTIGATION OF THE MBE GROWTH OF GAAS/ALAS QUANTUM-WELLS AND THE EFFECT OF ALAS SPIKES ON THEIR LUMINESCENCE

被引：3

作者：

KATZER, DS ^{[1
]}

GAMMON, D ^{[1
]}

SHANABROOK, BV ^{[1
]}

TADAYON, B ^{[1
]}

机构：

[1] USN,RES LAB,CODE 6876,WASHINGTON,DC 20375

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1990年 / 8卷 / 01期

关键词：

D O I：

10.1016/0749-6036(90)90268-C

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The interfacial smoothness of GaAs/AlAs quantum well structures is examined using photoluminescence (PL) and reflection high-energy electron diffraction (RHEED). Transitions from what are commonly referred to as "pseudo-smooth" to "rough" to "truly-smooth" interfaces are observed by varying the growth interrupt time. Truly-smooth GaAs on AlAs interfaces are achieved simply using growth interruption. We discuss the possible utility of using AlAs spikes in GaAs/AlAs quantum wells as a more sensitive structural probe of the heterojunction interfaces. © 1990.

引用

页码：19 / 24

页数：6

共 7 条

[1] LINEWIDTH OF FREE-EXCITONS IN QUANTUM-WELLS - CONTRIBUTION BY ALLOY DISORDER SCATTERING [J].