IMPROVEMENTS IN THE HORIZONTAL RIBBON GROWTH TECHNIQUE FOR SINGLE-CRYSTAL SILICON

被引:38
作者
KUDO, B
机构
关键词
D O I
10.1016/0022-0248(80)90248-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:247 / 259
页数:13
相关论文
共 9 条
[1]  
Bleil C. E., 1969, Journal of Crystal Growth, V5, P99, DOI 10.1016/0022-0248(69)90020-7
[2]  
Bleil C.E., 1972, US patent, Patent No. 3681033
[3]  
FAUST JW, 1968, Patent No. 3370927
[4]  
GAULE GK, 1961, METALLURGY ELEMENTAL, P201
[5]  
KUDO B, 1976, 79TH STUD M 131ST CO
[6]  
SHIMURA Y, 1968, Patent No. 43286
[7]  
Shockley William, 1962, US Patent, Patent No. [3031275, 3,031,275A]
[8]   THEORETICAL-ANALYSIS OF HEAT-FLOW IN HORIZONTAL RIBBON GROWTH FROM A MELT [J].
ZOUTENDYK, JA .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3927-3932
[9]  
1975, KINZOKU JIHYO, P407