VAPOR-PHASE EPITAXIAL-GROWTH OF INGAAS LATTICE MATCHED TO (100) INP FOR PHOTO-DIODE APPLICATION

Vapor-phase epitaxial growth of In0.53Ga0.47As lattice matched to (100) -oriented InP substrates is described, and the performance of photodiodes fabricated from this material is presented. Gas-flow conditions for lattice-matched growth with various Ga-CHl flows were established for growth using the hydride process. The effect of substrate temperature on gas-flow ratios necessary for lattice-matched growth was studied over the temperature range 650-750°C. Growth rates were found to vary from about 8 to about 60 μm/h over this temperature range. The activation energy of surface reaction was determined to be 44 kcal/mole. Photodiodes fabricated from an InP/In0.53Ga0.47As/InP structure showed rise and fall times of ≲1 nsec with quantum efficiencies in excess of 95% at 1.22 μm.