PHENOMENOLOGICAL ASPECTS OF CW MICROWAVE OSCILLATIONS IN GaAs

被引：20

作者：

Hakki, B. W. ^{[1
]}

Knight, S. ^{[1
]}

机构：

[1] Bell Tel Labs Inc, Murray Hill, NJ USA

来源：

SOLID STATE COMMUNICATIONS | 1965年 / 3卷 / 05期

关键词：

D O I：

10.1016/0038-1098(65)90228-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

CW microwave oscillations were produced in GaAs between (1.8-7.5) kMc at room temperature. The signal frequency was independent of applied voltage but had almost the same temperature dependence as the mobility. This led to the conclusion that the domains which accompany oscillations move In the semiconductor at a velocity which is almost independent of bias voltage.

引用

页码：89 / 91

页数：3

共 9 条

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