LOW DEFECT DENSITY AMORPHOUS HYDROGENATED SILICON PREPARED BY HOMOGENEOUS CHEMICAL VAPOR-DEPOSITION

被引：65

作者：

SCOTT, BA

REIMER, JA

PLECENIK, RM

SIMONYI, EE

REUTER, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 11期

关键词：

D O I：

10.1063/1.92972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：973 / 975

页数：3

共 27 条

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[25] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].

STAEBLER, DL ;

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[26]

WOLFORD DJ, 1982, B AM PHYS SOC, V27, P145

[27] OPTICAL AND PHOTOCONDUCTIVE PROPERTIES OF DISCHARGE-PRODUCED AMORPHOUS SILICON [J].

ZANZUCCHI, PJ ;

WRONSKI, CR ;

CARLSON, DE .

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