SELECTIVE POLYSILICON OXIDATION TECHNOLOGY FOR VLSI ISOLATION

被引：21

作者：

MATSUKAWA, N

NOZAWA, H

MATSUNAGA, J

KOHYAMA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 04期

关键词：

D O I：

10.1109/T-ED.1982.20743

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：561 / 567

页数：7

共 12 条

[1]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[2] INFLUENCE OF FILM STRESS AND THERMAL-OXIDATION ON GENERATION OF DISLOCATIONS IN SILICON [J].

BOHG, A ;

GAIND, AK .

APPLIED PHYSICS LETTERS, 1978, 33 (10) :895-897

[3]

Burkhardt P. J., 1979, IBM Technical Disclosure Bulletin, V22, P1862

[4]

GROVE AS, 1967, PHYS TECHNOL S, P174

[5]

HORIIKE Y, 1981, JAPAN J APPL PHYS, V20

[6] FORMATION OF SILICON-NITRIDE AT A SI-SIO2 INTERFACE DURING LOCAL OXIDATION OF SILICON AND DURING HEAT-TREATMENT OF OXIDIZED SILICON IN NH3 GAS [J].

KOOI, E ;

VANLIEROP, JG ;

APPELS, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1117-1120

[7] LATERAL EFFECT OF OXIDATION ON BORON-DIFFUSION IN (100) SILICON [J].

LIN, AM ;

DUTTON, RW ;

ANTONIADIS, DA .

APPLIED PHYSICS LETTERS, 1979, 35 (10) :799-801

[8]

Matsunaga J., 1980, International Electron Devices Meeting. Technical Digest, P565

[9] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J].

SCHRODER, DK ;

GULDBERG, J .

SOLID-STATE ELECTRONICS, 1971, 14 (12) :1285-+

[10] BIRDS BEAK CONFIGURATION AND ELIMINATION OF GATE OXIDE THINNING PRODUCED DURING SELECTIVE OXIDATION [J].

SHANKOFF, TA ;

SHENG, TT ;

HASZKO, SE ;

MARCUS, RB ;

SMITH, TE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :216-222

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