BREATHING-MODE LATTICE-RELAXATION ASSOCIATED WITH THE VACANCY AND PHOSPHORUS-VACANCY-PAIR (E-CENTER) DEFECT IN SILICON

被引：19

作者：

SAMARA, GA

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.37.8523

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8523 / 8526

页数：4

共 19 条

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[8] LATTICE DISTORTION NEAR VACANCIES IN DIAMOND AND SILICON .2. [J].

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[9] SYMMETRIC LATTICE-DISTORTIONS AROUND DEEP-LEVEL IMPURITIES IN SEMICONDUCTORS - VACANCY AND SUBSTITUTIONAL CU IN SILICON [J].

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