THE EFFECT OF JUNCTION SHAPE AND SURFACE RECOMBINATION ON TRANSISTOR CURRENT GAIN

被引：31

作者：

MOORE, AR

PANKOVE, JI

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1954年 / 42卷 / 06期

关键词：

D O I：

10.1109/JRPROC.1954.274750

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：907 / 913

页数：7

共 8 条

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LAW, RR
MUELLER, CW
PANKOVE, JI
ARMSTRONG, LD
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1352 - 1357
[3] NAVON S, 1952, P IRE, V40, P1345
[4] P-N JUNCTION TRANSISTORS
SHOCKLEY, W
SPARKS, M
TEAL, GK
[J]. PHYSICAL REVIEW, 1951, 83 (01): : 151 - 162
[5] SHOCKLEY W, ELECTRONS HOLES SEMI, P321
[6] SPANGENBERG K, 1948, VACUUM TUBES, P80
[7] THEORY OF ALPHA FOR P-N-P DIFFUSED JUNCTION TRANSISTORS
STEELE, EL
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1424 - 1428
[8] ON THE VARIATION OF JUNCTION-TRANSISTOR CURRENT-AMPLIFICATION FACTOR WITH EMITTER CURRENT
WEBSTER, WM
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06): : 914 - 920