HIGH-SPEED MOLYBDENUM GATE MOS RAM

被引：14

作者：

KONDO, M

MANO, T

YANAGAWA, F

KIKUCHI, H

AMAZAWA, T

KIUCHI, K

IEDA, N

YOSHIMURA, H

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1978年 / 13卷 / 05期

关键词：

D O I：

10.1109/JSSC.1978.1051108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：611 / 616

页数：6

共 12 条

[1] DESIGN OF A HIGH-PERFORMANCE 1024-B SWITCHED CAPACITOR P-CHANNEL IGFET MEMORY CHIP [J].

BOLL, HJ ;

LYNCH, WT .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1973, SC 8 (05) :310-318

[2] SELF-REGISTERED MOLYBDENUM-GATE MOSFET [J].

BROWN, DM ;

ENGELER, WE ;

GARFINKEL, M ;

GRAY, PV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (08) :874-+

[3] P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET [J].

BROWN, DM ;

CADY, WR ;

SPRAGUE, JW ;

SALVAGNI, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) :931-&

[4] PERFORMANCE OF REFRACTORY-METAL MULTILEVEL INTERCONNECTION SYSTEM [J].

ENGELER, WE ;

BROWN, DM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) :54-&

[5]

IEDA N, 1977, 9TH C SOL STAT DEV D, P17

[6] HIGH-SPEED 16-KBIT N-MOS RANDOM-ACCESS MEMORY [J].

ITOH, K ;

SHIMOHIGASHI, K ;

CHIBA, K ;

TANIGUCHI, K ;

KAWAMOTO, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (05) :585-590

[7]

KONDO M, 1978, IEEE INT SOLID STATE, P158

[8]

MOCHIZUKI T, 1977, 9TH C SOL STAT DEV, P11

[9]

NABER CT, 1972, J ELECTROCHEM SOC, V119, pC301

[10] EFFECT OF HEAT-TREATMENT AFTER DEPOSITION ON INTERNAL-STRESS IN MOLYBDENUM FILMS ON SIO2-SI SUBSTRATES [J].

OIKAWA, H ;

NAKAJIMA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1153-1156

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