HEAT-TRANSFER THROUGH THE MELT IN A SILICON CZOCHRALSKI PROCESS

Most of the thermal models for CZ crystal growth are based on the assumption of conduction dominance, neglecting convective heat transfer in the melt. The effects of convective heat transfer in the Si melt are studied in terms of two extreme models: an axially symmetric laminar flow model and a k-e model of turbulence. The results are compared with those of a conduction dominated thermal model. Heat transfer through the melt is convection dominated for a production scale puller with radius 0.2 m, while the conduction dominated thermal model is valid for a laboratory scale melt with radius 0.075 m. © 1990, Elsevier Science Publishers B.V.. All rights reserved.