METAL-INSULATOR-TRANSITION IN DISORDERED VO2

被引：35

作者：

CHUDNOVSKII, FA ^{[1
]}

STEFANOVICH, GB ^{[1
]}

机构：

[1] PURDUE UNIV,W LAFAYETTE,IN 47907

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1992年 / 98卷 / 01期

关键词：

D O I：

10.1016/0022-4596(92)90079-B

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Disordered VO2 films were prepared by electrochemical anodic oxidation of vanadium. The crystallinity, stoichiometry, conductivity, Hall effect, ESR, and optical adsorption data in disordered VO2 films have been studied. The main result of this work is that metal-insulator phase transition (MIT) has been preserved in the absence of long-range crystallographic order. A Peierls-like instability which is required for the realization of long-range crystallographic order is therefore not the driving force of the MIT in VO2. The properties of the disordered VO2 are compared to those of crystalline VO2 in metallic and semiconductor phases. The essential role of electron localization in influencing the behavior of the disordered VO2 is shown. Possible mechanisms of electron localization in the semiconductor and metallic phases are discussed. © 1992.

引用

页码：137 / 143

页数：7

共 35 条

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