MOTT-ANDERSON LOCALIZATION IN 2-DIMENSIONAL BAND TAIL OF SI INVERSION LAYERS

被引：98

作者：

TSUI, DC ^{[1
]}

ALLEN, SJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1974年 / 32卷 / 21期

关键词：

D O I：

10.1103/PhysRevLett.32.1200

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1200 / 1203

页数：4

共 21 条

[1] LOCALIZED STATES IN INVERTED SILICON-SILICON DIOXIDE INTERFACES [J].

ABRAM, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :L379-L381

[2] FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON [J].

ALLEN, SJ ;

TSUI, DC ;

DALTON, JV .

PHYSICAL REVIEW LETTERS, 1974, 32 (03) :107-110

[3]

Chaplik A. V., 1972, Soviet Physics - JETP, V35, P395

[4]

CHAPLIK AV, 1972, ZH EKSP TEOR FIZ+, V62, P746

[5]

Cohen M. H., 1970, Journal of Non-Crystalline Solids, V4, P391, DOI 10.1016/0022-3093(70)90068-2

[6] THEORY OF AMORPHOUS SEMICONDUCTORS [J].

COHEN, MH .

PHYSICS TODAY, 1971, 24 (05) :26-+

[7] NUMERICAL STUDIES OF LOCALIZATION IN DISORDERED SYSTEMS [J].

EDWARDS, JT ;

THOULESS, DJ .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (08) :807-&

[8] SEMICLASSICAL THEORY OF ELECTRON-TRANSPORT PROPERTIES IN A DISORDERED MATERIAL [J].

EGGARTER, TP .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1972, 5 (06) :2496-+

[9] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[10]

FANG FF, 1970, PHYS REV, V41, P1825

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