HIGH-POWER AND HIGH-EFFICIENCY 1.3-MU-M INASP COMPRESSIVELY-STRAINED MQW LASERS AT HIGH-TEMPERATURES

[1] ZAH C.E., BHAT R., PATHAK B., FAVIRE F., WANG M.C., LIN W., READKIS N.C., HWANG D.M., KOZA M.A., LEE T.P., WANG Z., DARBY D., FLANDERS D., HSIEH J.J., High performance uncooled 1.3-μm AlXGaYIn1-x-yAs/lnP strained-layer quantum-well lasers for fiber-in-the-loop applications, Tech. Dig. OFC'94, pp. 204-205, (1994)

[2] YAMADA H., SENGA K., SASAKI Y., TORIKAI T., UJI T., -40C~+85°C bias-free λ = 1.3μm strained MQW-LDs for Gb/s transmission modules without temperature control, Tech. Dig. ECOC'94, 719, pp. 719-722, (1994)

[3] THUS P.J.A., VAN DONGEN T., TIEMEIJER L.F., BINSMA J.J.M., High-performance λ = 1.3μm inGaAsP-InP strained-layer quantum well lasers, J. Lightwave Technol, LT-12, pp. 28-37, (1994)

[4] TEMKIN H., COBLENTZ D., LOGAN R.A., VAN DER ZIEL J.P., TANBUN E.K.T., YADVISH R.D., SERGENT A.M., High temperature characteristics of InGaAsP/InP laser structures, Appl. Phys. Lett., 62, pp. 2402-2404, (1992)

[5] OOHASHI H., HIRONO T., SEKI S., SUGIURA H., NAKANO J., YAMAMOTO M., TOHMORI Y., YOKOYAMA K., High temperature operation InAsP-based MQW lasers, IPRM'94, (1994)

[6] SEKI S., YOKOYAMA K., The effects of strain on the threshold current density in InGaAsP/InP strained-layer single quantum-well lasers, J. Appl Phys., 76, pp. 3250-3254, (1994)

[7] SUGIURA H., MITSUHARA M., OOHASHI H., HIRONO T., NAKASHIMA K., Metalorganic molecular beam epitaxy of strained InAsP/InGaAsP multi-quantum-wells for 1.3μM wavelength laser diodes, J. Crystal Growth, 147, pp. 1-7, (1995)

[1] ZAH C.E., BHAT R., PATHAK B., FAVIRE F., WANG M.C., LIN W., READKIS N.C., HWANG D.M., KOZA M.A., LEE T.P., WANG Z., DARBY D., FLANDERS D., HSIEH J.J., High performance uncooled 1.3-μm AlXGaYIn1-x-yAs/lnP strained-layer quantum-well lasers for fiber-in-the-loop applications, Tech. Dig. OFC'94, pp. 204-205, (1994)

[2] YAMADA H., SENGA K., SASAKI Y., TORIKAI T., UJI T., -40C~+85°C bias-free λ = 1.3μm strained MQW-LDs for Gb/s transmission modules without temperature control, Tech. Dig. ECOC'94, 719, pp. 719-722, (1994)

[3] THUS P.J.A., VAN DONGEN T., TIEMEIJER L.F., BINSMA J.J.M., High-performance λ = 1.3μm inGaAsP-InP strained-layer quantum well lasers, J. Lightwave Technol, LT-12, pp. 28-37, (1994)

[4] TEMKIN H., COBLENTZ D., LOGAN R.A., VAN DER ZIEL J.P., TANBUN E.K.T., YADVISH R.D., SERGENT A.M., High temperature characteristics of InGaAsP/InP laser structures, Appl. Phys. Lett., 62, pp. 2402-2404, (1992)

[5] OOHASHI H., HIRONO T., SEKI S., SUGIURA H., NAKANO J., YAMAMOTO M., TOHMORI Y., YOKOYAMA K., High temperature operation InAsP-based MQW lasers, IPRM'94, (1994)

[6] SEKI S., YOKOYAMA K., The effects of strain on the threshold current density in InGaAsP/InP strained-layer single quantum-well lasers, J. Appl Phys., 76, pp. 3250-3254, (1994)

[7] SUGIURA H., MITSUHARA M., OOHASHI H., HIRONO T., NAKASHIMA K., Metalorganic molecular beam epitaxy of strained InAsP/InGaAsP multi-quantum-wells for 1.3μM wavelength laser diodes, J. Crystal Growth, 147, pp. 1-7, (1995)