THEORY OF SUBPICOSECOND PULSE GENERATION BY ACTIVE MODELOCKING OF A SEMICONDUCTOR-LASER AMPLIFIER IN AN EXTERNAL CAVITY - LIMITS FOR THE PULSEWIDTH

被引:18
作者
SCHELL, M [1 ]
WEBER, AG [1 ]
BOTTCHER, EH [1 ]
SCHOLL, E [1 ]
BIMBERG, D [1 ]
机构
[1] TECH UNIV BERLIN,INST THEORET PHYS,W-1000 BERLIN 12,GERMANY
关键词
D O I
10.1109/3.81338
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Active modelocking of a semiconductor laser amplifier (SCLA) in an external cavity is theoretically modeled, using a cosh-2-description for the optical pulses. Analytical solutions are derived. The model includes finite gainwidth, which is shown to be of the largest importance for a correct description, and gain saturation. A lower limit of the optical pulsewidth is derived in terms of the gainwidth, the injection current, the external loss, and other parameters. In recent experiments Bowers et al. found, surprisingly, pulses being a factor of 10 to 100 broader than the inverse gainwidth, and trailing pulses with an intensity almost of the same order of magnitude as the leading one even for SCLA facet reflectivities as low as 10(-2). Both features are quantitatively explained by our theory.
引用
收藏
页码:402 / 409
页数:8
相关论文
共 32 条
[1]  
Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012
[2]  
BAUMS D, 1988, J PHYS, V6, P405
[3]   GAIN MODULATION OF UNBIASED SEMICONDUCTOR-LASERS - ULTRASHORT LIGHT-PULSE GENERATION IN THE 0.8-MU-M-1.3-MU-M WAVELENGTH RANGE [J].
BIMBERG, D ;
KETTERER, K ;
BOTTCHER, EH ;
SCHOLL, E .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (01) :23-45
[4]   ACTIVELY MODE-LOCKED SEMICONDUCTOR-LASERS [J].
BOWERS, JE ;
MORTON, PA ;
MAR, A ;
CORZINE, SW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1426-1439
[5]   ROLE OF SPONTANEOUS EMISSION IN THE DYNAMICS OF MODE-LOCKING BY SYNCHRONOUS PUMPING [J].
CATHERALL, JM ;
NEW, GHC .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1593-1599
[6]   HIGH PEAK POWER PICOSECOND PULSE GENERATION FROM ALGAAS EXTERNAL CAVITY MODE-LOCKED SEMICONDUCTOR-LASER AND TRAVELING-WAVE AMPLIFIER [J].
DELFYETT, PJ ;
LEE, CH ;
ALPHONSE, GA ;
CONNOLLY, JC .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :971-973
[7]   A MODEL OF A DIODE-LASER ACTIVELY MODE-LOCKED BY GAIN MODULATION [J].
DEMOKAN, MS .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1986, 60 (01) :67-85
[8]   ACTIVE MODE-LOCKING CHARACTERISTICS OF INGAASP SINGLE-MODE FIBER COMPOSITE CAVITY LASERS [J].
EISENSTEIN, G ;
TUCKER, RS ;
KOREN, U ;
KOROTKY, SK .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (01) :142-148
[9]   QUANTUM-MECHANICAL RATE EQUATIONS FOR SEMICONDUCTOR LASERS [J].
HAUG, H .
PHYSICAL REVIEW, 1969, 184 (02) :338-+
[10]   THEORY OF MODELOCKING OF A LASER DIODE IN AN EXTERNAL RESONATOR [J].
HAUS, HA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4042-4049