BEHAVIOR OF BORON IMPURITIES IN N-TYPE GALLIUM-ARSENIDE AND GALLIUM-PHOSPHIDE

被引：35

作者：

MORRISON, SR ^{[1
]}

NEWMAN, RC ^{[1
]}

THOMPSON, F ^{[1
]}

机构：

[1] UNIV READING,JJ THOMSON PHYS LAB,READING,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1974年 / 7卷 / 03期

关键词：

D O I：

10.1088/0022-3719/7/3/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：633 / 644

页数：12

共 24 条

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[3] BASS SJ, 1966, P INT S GALLIUM ARSE, P41
[4] CORBETT JW, 1973, RADIATION DAMAGE DEF
[5] OPTICAL PROPERTIES OF GROUP 4 ELEMENTS CARBON AND SILICON IN GALLIUM PHOSPHIDE
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[6] LOCALIZED MODE FREQUENCY FOR SUBSTITUTIONAL IMPURITIES IN ZINC BLENDE TYPE CRYSTALS
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MITRA, SS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (12) : 2737 - &
[7] LOCAL VIBRATIONAL MODES OF CARBON IN GAP
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DEAN, PJ
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (08): : 1762 - +
[8] JORDAN AS, TO BE PUBLISHED
[9] SILICON-COPPER AND SILICON-ZINC COMPLEXES IN GALLIUM-PHOSPHIDE
MORRISON, SR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (03): : 619 - 626
[10] INTERSTITIAL NITROGEN DEFECTS IN GALLIUM-PHOSPHIDE
MORRISON, SR
NEWMAN, RC
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (11): : L223 - L225