CHANGES OF THE DC RESISTIVITY AND THE BROAD-BAND IR REFLECTIVITY OF THIN METAL-FILMS DUE TO COVERAGE

被引：32

作者：

HEIN, M

SCHUMACHER, D

机构：

[1] Lehrstuhl für Oberflächenwissenschaft, Heinrich-Heine-Universität, Düsseldorf, 40225

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1995年 / 28卷 / 09期

关键词：

D O I：

10.1088/0022-3727/28/9/022

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The adsorbate-induced changes of the IR reflectivity and the DC resistivity of thin silver and copper films were examined. A linear dependence between both quantities could be observed, as predicted by theory. For the measurements of the IR reflectivity, a very simple method was used, which allows the detection of changes down to 10(-4).

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页码：1937 / 1941

页数：5

相关论文

共 19 条

[1]

Ashcroft N.D.M., 1976, SOLID STATE PHYS

[2] SURFACE ELECTROMAGNETIC-FIELDS [J].

FEIBELMAN, PJ .

PROGRESS IN SURFACE SCIENCE, 1982, 12 (04) :287-407

[3]

FUCHS K, 1932, P CAMBRIDGE PHIL SOC, V34, P100

[4] VARIATION OF THE DC-RESISTANCE OF SMOOTH AND ATOMICALLY ROUGH SILVER FILMS DURING EXPOSURE TO C2H6 AND C2H4 [J].

GRABHORN, H ;

OTTO, A ;

SCHUMACHER, D ;

PERSSON, BNJ .

SURFACE SCIENCE, 1992, 264 (03) :327-340

[5] ADSORBATE-SUBSTRATE RESONANT INTERACTIONS OBSERVED FOR CO ON CU(100) IN THE FAR INFRARED [J].

HIRSCHMUGL, CJ ;

WILLIAMS, GP ;

HOFFMANN, FM ;

CHABAL, YJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (04) :480-483

[6] OPTICAL AND INFRARED REFLECTIVITY OF METALS AT LOW TEMPERATURES [J].

HOLSTEIN, T .

PHYSICAL REVIEW, 1952, 88 (06) :1427-1428

[7]

KOCK HG, 1967, THESIS TU HANNOVER

[8] MACROSCOPIC APPROACH TO THE THEORY OF REFLECTIVITY [J].

LANGRETH, DC .

PHYSICAL REVIEW B, 1989, 39 (14) :10020-10027

[9] ADSORBATE-INDUCED CHANGES IN THE INFRARED REFLECTANCE AND RESISTIVITY OF METALS [J].

LIN, KC ;

TOBIN, RG ;

DUMAS, P ;

HIRSCHMUGL, CJ ;

WILLIAMS, GP .

PHYSICAL REVIEW B, 1993, 48 (04) :2791-2794

[10] APPLICATIONS OF SURFACE RESISTIVITY TO ATOMIC SCALE FRICTION, TO THE MIGRATION OF HOT ADATOMS, AND TO ELECTROCHEMISTRY [J].

PERSSON, BNJ .

JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (02) :1659-1672