EXCHANGE INSTABILITIES IN AN NORMAL-TYPE SILICON INVESION LAYER

被引：5

作者：

KALIA, RK

QUINN, JJ

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.17.1383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1383 / 1387

页数：5

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