A 1024-ELEMENT HIGH-PERFORMANCE SILICON TACTILE IMAGER

被引：39

作者：

SUZUKI, K

NAJAFI, K

WISE, KD

机构：

[1] Center for Integrated Sensors and Circuits, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

[2] Center for Integrated Sensors and Circuits, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期

关键词：

D O I：

10.1109/16.57136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 32 × 32-element capacitive silicon tactile imager has been developed for use in precision robotics applications where high density and high resolution are important. The silicon chip measures 1.6 cm × 1.6 cm and is organized in an X–Y matrix of 1024 capacitor elements on 0.5-mm centers. The process uses two boron diffusions (deep and shallow) followed by a silicon-to-glass electrostatic bonding step and subsequent unmasked wafer dissolution. This results in a thick center plate for the sense capacitor supported by thinner beams. Only four noncritical masking steps for silicon and two for glass are required. A measured force sensitivity of 0.27 pF/gmf/element, temperature sensitivity of less than 30 ppm/ °C, and maximum operating force of ≈ 1 gm/element has been obtained. A discrete data acquisition system used with the device offers over 6 b of force resolution and the imager can be read at a rate of 15–20 µs/element, offering an effective frame rate of 5.1 ms. © 1990 IEEE

引用

页码：1852 / 1860

页数：9

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