A 1024-ELEMENT HIGH-PERFORMANCE SILICON TACTILE IMAGER

被引:39
作者
SUZUKI, K
NAJAFI, K
WISE, KD
机构
[1] Center for Integrated Sensors and Circuits, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor
[2] Center for Integrated Sensors and Circuits, Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor
关键词
D O I
10.1109/16.57136
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 32 × 32-element capacitive silicon tactile imager has been developed for use in precision robotics applications where high density and high resolution are important. The silicon chip measures 1.6 cm × 1.6 cm and is organized in an X–Y matrix of 1024 capacitor elements on 0.5-mm centers. The process uses two boron diffusions (deep and shallow) followed by a silicon-to-glass electrostatic bonding step and subsequent unmasked wafer dissolution. This results in a thick center plate for the sense capacitor supported by thinner beams. Only four noncritical masking steps for silicon and two for glass are required. A measured force sensitivity of 0.27 pF/gmf/element, temperature sensitivity of less than 30 ppm/ °C, and maximum operating force of ≈ 1 gm/element has been obtained. A discrete data acquisition system used with the device offers over 6 b of force resolution and the imager can be read at a rate of 15–20 µs/element, offering an effective frame rate of 5.1 ms. © 1990 IEEE
引用
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页码:1852 / 1860
页数:9
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