THE EFFECT OF A-SI-H THIN-FILM LAYERS ON THE DETERMINATION OF PLASMA PARAMETERS IN AN ELECTROSTATIC DOUBLE-PROBE MEASUREMENT

被引：3

作者：

CHANG, JS

ONO, S

TEII, S

机构：

[1] Department of Electrical and Electronic Engineering, Musashi Institute of Technology, Tokyo

[2] Department of Engineering Physics, McMaster University, Hamilton, ON

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1991年 / 24卷 / 08期

关键词：

D O I：

10.1088/0022-3727/24/8/012

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of a-Si:H thin film layers on the double-probe plasma measurements is experimentally and theoretically investigated. The results show that the thin film layer acts as a semiconducting layer or Schottky barrier between the metal-semiconductor interfaces depending on the film thicknesses. Hence, the non-linear effects on the double-probe characteristics are observed. Due to the a-Si:H thin film deposition, the plasma parameters determined by the double probes will underestimate or overestimate plasma density and electron temperatures.

引用

页码：1310 / 1315

页数：6

共 17 条

[1] DOUBLE-PROBE THEORY FOR A CONTINUUM LOW-DENSITY PLASMA [J].