MICROANALYTICAL INVESTIGATIONS OF THE INTERMEDIATE SINTERING STATE OF SILICON-CARBIDE

被引：2

作者：

WROBLEWSKA, GH

HAMMINGER, R

机构：

[1] Technische Universität Hamburg-Harburg, 2100 Hamburg 90

[2] Hoechst AG

来源：

CERAMICS INTERNATIONAL | 1991年 / 17卷 / 03期

关键词：

D O I：

10.1016/0272-8842(91)90067-A

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The intermediate state of sintering of boron- and carbon-doped pressureless sinterable silicon carbide was analyzed in situ using analytical transmission electron microscopy (including electron energy loss spectroscopy and energy dispersive analysis of X-rays) as well as high resolution Auger electron spectroscopy. From the results obtained it became evident that any type of liquid phase-even a transient liquid phase-can be excluded. The segregation of boron on the SiC grain boundaries has not been confirmed. The investigations have shown the reduction of SiO2 layers present on the SiC grains and the development of secondary SiC. The microanalytical in-situ results concerning the intermediate and also the final state of sintering as well as the specific roles of the sintering additives boron and carbon are discussed in detail.

引用

页码：199 / 203

页数：5

共 23 条

[1]

Greskovich, Rosolowski, Sintering of covalent solids, J. Am. Ceram. Soc., 59, (1976)

[2]

Prochazka, The role of boron and carbon in the sintering of silicon carbide, Special Ceramics, 6, (1974)

[3]

Negita, Effective sintering aids for silicon carbide ceramic reactivities of silicon carbide with various additives, Journal of the American Ceramic Society, 69, (1986)

[4]

Lange, Gupta, Sintering of SiC with boron compounds, Journal of the American Ceramic Society, 59, (1976)

[5]

Kieffer, Gugel, Leimer, Ettmayer, Investigation of the system boron-carbon-silicon, Ber. Dtsch. Ker. Ges., 49, (1972)

[6]

Hamminger, Grathwohl, Thummler, Microanalytical investigations of sintered SiC Part I: Bulk material and inclusions, J. Mater. Sci., 18, (1983)

[7]

Hamminger, Grathwohl, Thummler, Microanalytical investigations of sintered SiC. Part 2: Study of the grain boundaries of sintered SiC by high resolution Auger electron spectroscopy, J. Mater. Sci., 18, (1983)

[8]

Davis, Lane, Carter, Bentley, Wadlin, Griffin, Linton, More, Microanalytical and microstructural analyses of B and Al regions in sintered alpha silicon carbide, Scanning Electron Microsc., 3, (1984)

[9]

Browning, Smialek, Jacobson, Multielement mapping of α-SiC by scanning Augur microscopy, Adv. Ceram. Mater., 2, (1987)

[10]

Wroblewska, Nold, Thummler, The role of B and C additions on the microstructural development of pressureless sintered silicon carbide, Ceram. Int., 16, (1990)

← 1 2 3 →