DIAMOND DEPOSITION IN AN ARGON METHANE OXYGEN PLASMA

被引：13

作者：

JOERIS, P

BENNDORF, C

BOHR, S

机构：

[1] Universität Hamburg, Institut für Physikalische Chemie, W-2000 Hamburg 13

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The deposition of diamond films by an argon-methane-oxygen mixture in a microwave plasma system is described. Our results demonstrate that it is possible to grow diamond without the addition of hydrogen. The oxygen content is a critical parameter for the phase purity of the deposited films. Mass spectroscopic measurements show that oxygen is suppressing the formation of acetylene in the plasma. These measurements are correlated with Raman spectroscopic data.

引用

页码：4638 / 4639

页数：2

共 7 条

[1] TOWARDS A GENERAL CONCEPT OF DIAMOND CHEMICAL VAPOR-DEPOSITION [J].