THE INITIAL-STAGES OF THE OXIDATION OF SI(100)2X1 STUDIED BY STM

被引：55

作者：

UDAGAWA, M ^{[1
]}

UMETANI, Y ^{[1
]}

TANAKA, H ^{[1
]}

ITOH, M ^{[1
]}

UCHIYAMA, T ^{[1
]}

WATANABE, Y ^{[1
]}

YOKOTSUKA, T ^{[1
]}

SUMITA, I ^{[1
]}

机构：

[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90383-U

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The initial stages of the oxidation of the Si(100)2 x 1 surface was studied at room temperature by scanning tunneling microscopy (STM). We found that "type-C defects' which are believed to be two half-dimers have a strong preference for oxidation, compared with areas having no defects. Oxidized type-C defects appear to be depressions in both positive and negative sample bias voltages. We also found two oxidized sites having no defects. Single steps are quite stable against oxidation. The oxidation of the Si(100)2 x 1 surface is discussed in terms of these sites.

引用

收藏

页码：946 / 951

页数：6

相关论文

共 30 条

[1] ATOM-RESOLVED SURFACE-CHEMISTRY - THE EARLY STEPS OF SI(111)-7X7 OXIDATION [J].

AVOURIS, P ;

LYO, IW ;

BOZSO, F .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :424-430

[2] CHEMISORPTION OF ATOMIC OXYGEN ON SI(100) - SELF-CONSISTENT CLUSTER AND SLAB MODEL INVESTIGATIONS [J].

BATRA, IP ;

BAGUS, PS ;

HERMANN, K .

PHYSICAL REVIEW LETTERS, 1984, 52 (05) :384-387

[3] STABILITIES OF SINGLE-LAYER AND BILAYER STEPS ON SI(001) SURFACES [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1691-1694

[4] INTERPRETATION OF THE SPECTRA OBTAINED FROM OXYGEN-ADSORBED AND OXIDIZED SILICON SURFACES [J].

CIRACI, S ;

ELLIALTIOGLU, S ;

ERKOC, S .

PHYSICAL REVIEW B, 1982, 26 (10) :5716-5729

[5]

DOYAMA M, 1991, COMPUTER AIDED INNOV, P215

[6] ADSORPTION OF H2S, H2O AND O2 ON SI(111) SURFACES [J].

FUJIWARA, K ;

OGATA, H ;

NISHIJIMA, M .

SOLID STATE COMMUNICATIONS, 1977, 21 (09) :895-897

[7] ELECTRON-SPECTROSCOPIC STUDIES OF THE EARLY STAGES OF THE OXIDATION OF SI [J].

GARNER, CM ;

LINDAU, I ;

SU, CY ;

PIANETTA, P ;

SPICER, WE .

PHYSICAL REVIEW B, 1979, 19 (08) :3944-3956

[8] DETERMINATION OF THE LOCAL ELECTRONIC-STRUCTURE OF ATOMIC-SIZED DEFECTS ON SI(001) BY TUNNELING SPECTROSCOPY [J].

HAMERS, RJ ;

KOHLER, UK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2854-2859

[9] SCANNING TUNNELING MICROSCOPY OF SI(001) [J].

HAMERS, RJ ;

TROMP, RM ;

DEMUTH, JE .

PHYSICAL REVIEW B, 1986, 34 (08) :5343-5357

[10] INITIAL-STAGES OF OXYGEN-ADSORPTION ON SI(111) .2. THE MOLECULAR PRECURSOR [J].

HOFER, U ;

MORGEN, P ;

WURTH, W ;

UMBACH, E .

PHYSICAL REVIEW B, 1989, 40 (02) :1130-1145