THE EFFECT OF ION-INDUCED DAMAGE ON IBIC IMAGES

被引：28

作者：

BREESE, MBH ^{[1
]}

GRIME, GW ^{[1
]}

DELLITH, M ^{[1
]}

机构：

[1] UNIV OXFORD,DEPT MAT,OXFORD OX1 3PH,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 77卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(93)95562-J

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Ion induced damage limits the number of charge pulses which can be measured in an IBIC (ion beam induced charge) image because the average measured charge pulse size decreases with cumulative beam dose. The cause and effects of MeV light ion induced damage in Si is reviewed here, and the merits of using MeV protons or MeV alpha-particles for IBIC is discussed. Results are presented showing how ion induced damage is detectable in a 4 Mbit DRAM (dynamic random access memory) device after a dose of approximately 100 3 MeV protons/mum2. A method of compensating for the effects of ion induced damage which enables more ions/ mum2 to be used to generate an IBIC image is described, and results of compensating IBIC images of the DRAM are shown.

引用

页码：332 / 338

页数：7

共 17 条

[1] CHARGE COLLECTION ION MICROSCOPY - IMAGING OF DEFECTS IN SEMICONDUCTORS WITH A POSITIVE-ION MICROBEAM [J].