ON THE THEORY OF GAAS-BASED QUANTUM-WELLS WITH EXTERNAL DELTA-DOPING

被引：4

作者：

CHICO, L

JASKOLSKI, W

PEREZALVAREZ, R

GARCIAMOLINER, F

机构：

[1] UNIV HABANA,DEPT FIS TEOR,HAVANA,CUBA

[2] NICHOLAS COPERNICUS UNIV,INST FIS,PL-87100 TORUN,POLAND

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1993年 / 5卷 / 49期

关键词：

D O I：

10.1088/0953-8984/5/49/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electron gas confined in GaAs/AlxGa1-xAs quantum wells delta-doped in the barriers has been self-consistently studied in an effective-mass model. In agreement with experimental evidence, our calculations show how the limitations in 2D electron density found in modulation-doped structures can be overcome with the delta-doping technique. The role of different structural parameters of these systems in the practical outcome is also discussed.

引用

收藏

页码：9069 / 9076

页数：8

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