PHOTOCONDUCTIVITY OF TLSBS2 MEASURED AT THE SOLID ELECTROLYTE INTERFACE

The photoresponse of high resistivity TlSbS//2 photoelectrodes has been investigated with and without background illumination. In contrast to the photoconductivity measurements in air, weakly absorbed background illumination leads to a huge enhancement of the photoresponse far above the absorption edge in the photoelectrochemical setup. In the latter case this behavior has been analyzed in detail. In the forbidden gap, structures have been measured which are interpreted as localized centers lying 0. 37, 0. 53, and 0. 70 eV above the valence band.