RADIATION-INDUCED ENERGY LEVELS IN SILICON

[1] AUKERMAN LW, 1958, REIC4 BATT MEM I TEC

[2] ENERGY LEVELS IN IRRADIATED GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 995 - 998

[3] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2, P67

[4] RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) : 1722 - 1729

[5] DREYFUS R, 1953, THESIS PURDUE U

[6] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[7] INFRARED ABSORPTION IN NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 272 - 274

[8] FAN HY, 1958, HALBLEITER PHOSPHORE, P113

[9] FAN HY, 1958, EFFECTS RADIATION MA, P159

[10] HILL DE, 1958, B AM PHYS SOC, V3, P142

[1] AUKERMAN LW, 1958, REIC4 BATT MEM I TEC

[2] ENERGY LEVELS IN IRRADIATED GERMANIUM [J]. PHYSICAL REVIEW, 1959, 113 (04): : 995 - 998

[3] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2, P67

[4] RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (12) : 1722 - 1729

[5] DREYFUS R, 1953, THESIS PURDUE U

[6] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1127 - 1134

[7] INFRARED ABSORPTION IN NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 272 - 274

[8] FAN HY, 1958, HALBLEITER PHOSPHORE, P113

[9] FAN HY, 1958, EFFECTS RADIATION MA, P159

[10] HILL DE, 1958, B AM PHYS SOC, V3, P142