SURFACE LAYERING IN LIQUID GALLIUM - AN X-RAY REFLECTIVITY STUDY

被引：270

作者：

REGAN, MJ

KAWAMOTO, EH

LEE, S

PERSHAN, PS

MASKIL, N

DEUTSCH, M

MAGNUSSEN, OM

OCKO, BM

BERMAN, LE

机构：

[1] HARVARD UNIV, DIV APPL SCI, CAMBRIDGE, MA 02138 USA

[2] HARVARD UNIV, DEPT PHYS, CAMBRIDGE, MA 02138 USA

[3] BAR ILAN UNIV, DEPT PHYS, IL-52100 RAMAT GAN, ISRAEL

[4] BROOKHAVEN NATL LAB, DEPT PHYS, UPTON, NY 11973 USA

[5] BROOKHAVEN NATL LAB, NATL SYNCHROTRON LIGHT SOURCE, UPTON, NY 11973 USA

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.75.2498

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Surface-induced atomic layering in liquid gallium has been observed using x-ray reflectivity, ultrahigh vacuum conditions, and sputtered clean surfaces. Reflectivity data, collected on a supercooled liquid sample to momentum transfers as large as q(z) = 3.0 Angstrom(-1), exhibit a strong maximum near 2.4 Angstrom(-1) indicating a layer spacing that is comparable to its atomic dimensions. The amplitude of the electron density oscillations decays with a characteristic length of 6 Angstrom. This is unexpectedly twice that of recent results for Hg, and the difference may be related to covalent bonding or supercooling.

引用

页码：2498 / 2501

页数：4

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