OPTICAL MIXING IN EPITAXIAL LIFT-OFF PSEUDOMORPHIC HEMTS

被引：7

作者：

BHATTACHARYA, D ^{[1
]}

BAL, PS ^{[1
]}

FETTERMAN, HR ^{[1
]}

STREIT, D ^{[1
]}

机构：

[1] TRW CO INC,DIV ELECTR SYST & TECHNOL,ELECTR SYST GRP,REDONDO BEACH,CA 90278

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 10期

关键词：

D O I：

10.1109/68.466580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present optical mixing in epitaxial lift-off (ELO) pseudomorphic HEMT's (PHEMT's) at difference frequencies in the microwave regime up to 22 GHz. The 3 mu m gate length AlGaAs-InGaAs PHEMT's were lifted off their host GaAs substrates and subsequently attached to quartz slides. It was observed that the ELO devices consistently resulted in stronger signals (similar to 7 dB) than the non-ELO devices under frontside and backside illumination, This is attributed to improved optical coupling efficiency, a decrease in substrate leakage, and an illumination-induced back gating effect for the ELO films.

引用

页码：1171 / 1173

页数：3

共 9 条

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