ROLE OF HYDROGEN IN THE FORMATION OF METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

[1] THE THEORY OF ANOMALOUS CARRIER PULSE-PROPAGATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 191 - 200

[2] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04): : 305 - 309

[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83

[4] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5539 - 5541

[5] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[7] DIELECTRIC RELAXATION OF POLAR LIQUIDS [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (05) : 1371 - 1375

[8] THEORY OF NON-EQUILIBRIUM DIFFUSIVE TRANSPORT IN DISORDERED MATERIALS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (04): : 341 - 356

[9] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2215 - 2218

[10] CHARGE TRAPPING EFFECTS IN AMORPHOUS-SILICON SILICON-NITRIDE THIN-FILM TRANSISTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 903 - 906

[1] THE THEORY OF ANOMALOUS CARRIER PULSE-PROPAGATION IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (02): : 191 - 200

[2] HYDROGENATED MICROVOIDS AND LIGHT-INDUCED DEGRADATION OF AMORPHOUS-SILICON SOLAR-CELLS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (04): : 305 - 309

[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83

[4] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5539 - 5541

[5] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[6] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]

[7] DIELECTRIC RELAXATION OF POLAR LIQUIDS [J]. JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (05) : 1371 - 1375

[8] THEORY OF NON-EQUILIBRIUM DIFFUSIVE TRANSPORT IN DISORDERED MATERIALS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (04): : 341 - 356

[9] METASTABLE DEFECTS IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2215 - 2218

[10] CHARGE TRAPPING EFFECTS IN AMORPHOUS-SILICON SILICON-NITRIDE THIN-FILM TRANSISTORS [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 903 - 906