LIGHT-INDUCED DEGRADATION OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED AT DIFFERENT RF POWERS

被引：3

作者：

ACHARYA, PK ^{[1
]}

MALHOTRA, LK ^{[1
]}

CHOPRA, KL ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,CTR MAT SCI & TECHNOL,NEW DELHI 110016,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6452 / 6455

页数：4

共 21 条

[1]

ACHARYA PK, IN PRESS THIN SOLID

[2] METASTABLE DEFECTS IN AMORPHOUS-SILICON ALLOYS [J].

ADLER, D ;

EBERHART, ME ;

JOHNSON, KH ;

ZYGMUNT, SA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :273-278

[3] METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON [J].

CRANDALL, RS .

PHYSICAL REVIEW B, 1987, 36 (05) :2645-2665

[4] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[5] PHOTOINDUCED CHANGES IN GLOW-DISCHARGE-DEPOSITED AMORPHOUS SILICON - STAEBLER-WRONSKI EFFECT [J].

ELLIOTT, SR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (04) :349-356

[6]

GUHA S, 1985, PHYSICAL PROPERTIES, P423

[7] INSITU SPECTROSCOPIC ELLIPSOMETRY STUDY OF THE GROWTH OF MICROCRYSTALLINE SILICON [J].

KUMAR, S ;

DREVILLON, B ;

GODET, C .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1542-1544

[8]

LEY L, 1984, TOPICS APPLIED PHYSI, V56, P66

[9] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES [J].

MORIGAKI, K ;

HIRABAYASHI, I ;

NAKAYAMA, M ;

NITTA, S ;

SHIMAKAWA, K .

SOLID STATE COMMUNICATIONS, 1980, 33 (08) :851-856

[10] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J].

PANKOVE, JI ;

BERKEYHEISER, JE .

APPLIED PHYSICS LETTERS, 1980, 37 (08) :705-706

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