PHOTOREFLECTANCE LINE SHAPE AT FUNDAMENTAL EDGE IN ULTRAPURE GAAS

被引：150

作者：

SHAY, JL

机构：

来源：

PHYSICAL REVIEW B | 1970年 / 2卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.2.803

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：803 / &

共 20 条

[1] SCREENING OF BOUND-STATE EXCITONS IN MODULATED REFLECTANCE
ALBERS, WA
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (08) : 410 - &
[2] ELECTRICAL FIELD EFFECTS ON DIELECTRIC CONSTANT OF SOLIDS
ASPNES, DE
[J]. PHYSICAL REVIEW, 1967, 153 (03): : 972 - +
[3] ASPNES DE, 1967, SOLID STATE COMMUN, V8, P267
[4] ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE
CARDONA, M
SHAKLEE, KL
POLLAK, FH
[J]. PHYSICAL REVIEW, 1967, 154 (03): : 696 - +
[5] PHOTOREFLECTANCE AND ELECTROREFLECTANCE IN SILICON
CERDEIRA, F
CARDONA, M
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (12) : 879 - &
[6] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS
ELLIOTT, RJ
[J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389
[7] SURFACE PROPERTIES OF N-TYPE GALLUIM ARSENIDE
FLINN, I
[J]. SURFACE SCIENCE, 1968, 10 (01) : 32 - &
[8] FRANKL DR, 1967, ELECTRICAL PROPERTIE, V7, P269
[9] GAY JG, 1968, PHYS REV, V172, P311
[10] MANY A, 1965, SEMICONDUCTOR SURFAC, P128