NEUTRON-DIFFRACTION STUDY OF CD3ND3SNBR3 - SEMICONDUCTOR-INSULATOR TRANSITION WITH ORIENTATIONAL ORDERING

被引：14

作者：

ONODAYAMAMURO, N ^{[1
]}

YAMAMURO, O ^{[1
]}

MATSUO, T ^{[1
]}

SUGA, H ^{[1
]}

OIKAWA, K ^{[1
]}

TSUCHIYA, N ^{[1
]}

KAMIYAMA, T ^{[1
]}

ASANO, H ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICA B | 1995年 / 213卷

关键词：

D O I：

10.1016/0921-4526(95)00173-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Neutron-diffraction experiments were performed on the semiconductor (room-temperature) and insulator (195 K) phases of CD3ND3SnBr3 using a powder diffractometer at KENS. Rietveld refinement revealed fully disordered CD3ND3+ ions (rotating like a spherical shell) in the semiconductor phase (Pm3m, Z = 1, a = 5.899 Angstrom). The insulator phase has a rhombohedral structure with cell doubling in three directions (R3c or R $($) over bar$$ 3c, Z = 8, a = 11.767 Angstrom, alpha = 88.997 degrees), suggesting that the C-N axis of the CD3ND3+ ion is ordered along the crystallographic C-3 or ($) over bar 3 axis and the SnBr6 octahedron is distorted from the regular O-h symmetry.

引用

页码：411 / 413

页数：3

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