THEORY OF TRANSIENT PHENOMENA IN THE TRANSPORT OF HOLES IN AN EXCESS SEMICONDUCTOR

被引：47

作者：

HERRING, C

机构：

来源：

BELL SYSTEM TECHNICAL JOURNAL | 1949年 / 28卷 / 03期

关键词：

D O I：

10.1002/j.1538-7305.1949.tb03643.x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：401 / 427

页数：27

共 8 条

[1] PHYSICAL PRINCIPLES INVOLVED IN TRANSISTOR ACTION [J].

BARDEEN, J ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1949, 75 (08) :1208-1225

[2] INVESTIGATION OF HOLE INJECTION IN TRANSISTOR ACTION [J].

HAYNES, JR ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1949, 75 (04) :691-691

[3]

PEARSON GL, 1949, APR WASH M AM PHYS S

[4]

PFANN WG, 1949, JUN CAMBR M AM PHYS

[5] THE DOUBLE-SURFACE TRANSISTOR [J].

SHIVE, JN .

PHYSICAL REVIEW, 1949, 75 (04) :689-690

[6]

SHOCKLEY W, 1949, JUN CAMBR M AM PHYS

[7]

SHOCKLEY W, 1949, BELL SYST T, V28

[8]

SUHL H, 1949, APR WASH M AM PHYS S