MBE-GROWN GERMANIUM ON SAPPHIRE (11BAR02)

被引：8

作者：

GODBEY, DJ

QADRI, SB

TWIGG, ME

RICHMOND, ED

机构：

[1] Naval Research Laboratory, Electronics Science and Technology Division Code 6816, Washington

来源：

THIN SOLID FILMS | 1990年 / 184卷

关键词：

D O I：

10.1016/0040-6090(90)90435-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single-crystal germanium has been grown on sapphire (11̄02) by molecular beam epitaxy. Germanium grows (110) when growth temperatures exceed 700°C, and the sapphire substrates have been preannealed above 1100°C. The in-plane registry was determined to be 111) (1012) by X-ray diffraction. The Ge(220) X-ray linewidth was measured to be 230″ (seconds of arc) for a 2 microm film grown at 800°C after the substrate was preannealed at 1400°C. © 1990.

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页码：379 / 386

页数：8

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