ATOMIC DIFFUSION-INDUCED DEEP LEVELS NEAR ZNSE/GAAS(100) INTERFACES

被引：40

作者：

RAISANEN, AD

BRILLSON, LJ

VANZETTI, L

BONANNI, A

FRANCIOSI, A

机构：

[1] INST NAZL FIS MAT,TECNOL AVANZATE SUPERFICI & CATALISI LAB,I-34012 TRIESTE,ITALY

[2] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 24期

关键词：

D O I：

10.1063/1.113737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescence spectroscopy measurements of ZnSe/GaAs(100) heterojunctions grown by molecular beam epitaxy reveal the formation of deep levels near]] buried" interfaces upon thermal annealing. A pronounced emission at 1.9-2.0 eV appears at temperatures in the 300-400°C range depending on the ZnSe growth conditions with a constant activation energy of 1.10 eV. X-ray photoemission spectroscopy indicates a correlation between this deep level and atomic diffusion of Ga and Zn across the heterointerface. Zn-rich ZnSe growth conditions dramatically reduce this emission, highlighting the importance of local interface composition on thermal stability.© 1995 American Institute of Physics.

引用

页码：3301 / 3303

页数：3

共 19 条

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