ATOMIC DIFFUSION-INDUCED DEEP LEVELS NEAR ZNSE/GAAS(100) INTERFACES

被引:40
作者
RAISANEN, AD
BRILLSON, LJ
VANZETTI, L
BONANNI, A
FRANCIOSI, A
机构
[1] INST NAZL FIS MAT,TECNOL AVANZATE SUPERFICI & CATALISI LAB,I-34012 TRIESTE,ITALY
[2] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455
关键词
D O I
10.1063/1.113737
中图分类号
O59 [应用物理学];
学科分类号
摘要
Luminescence spectroscopy measurements of ZnSe/GaAs(100) heterojunctions grown by molecular beam epitaxy reveal the formation of deep levels near]] buried" interfaces upon thermal annealing. A pronounced emission at 1.9-2.0 eV appears at temperatures in the 300-400°C range depending on the ZnSe growth conditions with a constant activation energy of 1.10 eV. X-ray photoemission spectroscopy indicates a correlation between this deep level and atomic diffusion of Ga and Zn across the heterointerface. Zn-rich ZnSe growth conditions dramatically reduce this emission, highlighting the importance of local interface composition on thermal stability.© 1995 American Institute of Physics.
引用
收藏
页码:3301 / 3303
页数:3
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