TRANSIENT SPACE-CHARGE LIMITED CURRENTS IN LIGHT-PULSE EXCITED SILICON

被引：15

作者：

TOVE, PA ^{[1
]}

ANDERSSON, LG ^{[1
]}

机构：

[1] UNIV UPPSALA, INST TECHNOL, ELECTR DEPT, UPPSALA, SWEDEN

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 09期

关键词：

D O I：

10.1016/0038-1101(73)90195-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：961 / +

页数：1

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[3]

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[4]

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[5] THEORY OF TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS IN PRESENCE OF TRAPPING [J].

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[6]

MARTINI M, 1973, APPLIED SOLID STATE, V3

[7]

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[8]

OTTAVIANI G, PRIVATE COMMUNICATIO

[9]

SEIBT W, 1970, 709 UPPS U I PHYS RE

[10] SPACE-CHARGE LIMITED EMISSION IN SEMICONDUCTORS [J].

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