TRANSIENT-4-WAVE-MIXING STUDIES OF GAAS MICRO-CRYSTALLITES

被引：4

作者：

CUNDIFF, ST ^{[1
]}

GOBEL, EO ^{[1
]}

KOCHERESHKO, VP ^{[1
]}

YAKOVLEV, DR ^{[1
]}

KOPEV, PS ^{[1
]}

LEDENTSOV, NN ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1994年 / 92卷 / 06期

关键词：

A NANOSTRUCTURES; A SEMICONDUCTORS; D OPTICAL PROPERTIES; E TIME-RESOLVED OPTICAL SPECTROSCOPIES;

D O I：

10.1016/0038-1098(94)90479-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present the results of transient-four-wave-mixing measurements performed on GaAs/AlAs microstructured samples in which GaAs micro-crystallites form during growth. A very strong resonance corresponding to the micro-crystallites is observed in the four-wave-mixing signal. This resonance has a pronounced polarization dependence. Contributions to the signal due to free and acceptor-bound excitons are distinguished. We ascribe the unusual temperature and excitation density dependences of the dephasing rate to the small size of the microcrystallites.

引用

页码：467 / 471

页数：5

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