EFFECT OF POLARIZED LIGHT ON 1.8-MU, 3.3-MU, AND 3.9-MU RADIATION-INDUCED ABSORPTION BANDS IN SILICON

被引：13

作者：

CHENG, LJ

VAJDA, P

机构：

来源：

PHYSICAL REVIEW | 1969年 / 186卷 / 03期

关键词：

D O I：

10.1103/PhysRev.186.816

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：816 / &

共 15 条

[1] A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J].

BEMSKI, G ;

WRIGHT, K ;

SZYMANSKI, B .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :1-&

[2]

BOYD AW, 1965, 2203 AT EN CAN LTD R

[3] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J].

CHENG, LJ ;

LORI, J .

PHYSICAL REVIEW, 1968, 171 (03) :856-+

[4] 3.9MU PHOTOCONDUCTIVITY BAND IN NEUTRON-IRRADIATED P-TYPE SILICON [J].

CHENG, LJ .

PHYSICS LETTERS A, 1967, A 24 (13) :729-&

[5]

CHENG LJ, 1968, RADIATION EFFECTS SE, P143

[6]

CHENG LJ, 1966, PHYS REV, V152, P1761

[7] PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].

CORBETT, JW ;

WATKINS, GD .

PHYSICAL REVIEW, 1965, 138 (2A) :A555-&

[8]

DEXTER DC, 1958, SOLID STATE PHYS, V6, P406

[9] INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].

FAN, HY ;

RAMDAS, AK .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134

[10] SIMPLIFIED LIGHT REFLECTION TECHNIQUE FOR ORIENTATION OF GERMANIUM AND SILICON CRYSTALS [J].

HANCOCK, RD ;

EDELMAN, S .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1956, 27 (12) :1082-1083

← 1 2 →