SILICON MATERIAL PROBLEMS IN SEMICONDUCTOR DEVICE TECHMOLOGY

[1] BARSON F, 1968, J ELECTROCHEM SOC, V115, P70

[2] BILLIG E, 1956, INT C PHYS SEMICOND

[3] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &

[4] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &

[5] COTTRELL AH, 1953, DISLOCAITONS PLASTIC

[6] STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 415 - +

[7] FAIRFIELD JM, 1968, ELECTROCHEM TECHNOL, V6, P110

[8] GOTZBERGER A, 1960, J APPL PHYS, V31, P1821

[9] GOTZBERGER A, 1963, J APPL PHYS, V34, P1591

[10] SUR DEUX VARIANTES DE LA METHODE DE LAUE ET LEURS APPLICATIONS [J]. ACTA CRYSTALLOGRAPHICA, 1949, 2 (03): : 133 - &

[1] BARSON F, 1968, J ELECTROCHEM SOC, V115, P70

[2] BILLIG E, 1956, INT C PHYS SEMICOND

[3] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &

[4] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &

[5] COTTRELL AH, 1953, DISLOCAITONS PLASTIC

[6] STRAIN EFFECTS AROUND PLANAR DIFFUSED STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (04) : 415 - +

[7] FAIRFIELD JM, 1968, ELECTROCHEM TECHNOL, V6, P110

[8] GOTZBERGER A, 1960, J APPL PHYS, V31, P1821

[9] GOTZBERGER A, 1963, J APPL PHYS, V34, P1591

[10] SUR DEUX VARIANTES DE LA METHODE DE LAUE ET LEURS APPLICATIONS [J]. ACTA CRYSTALLOGRAPHICA, 1949, 2 (03): : 133 - &