STRUCTURE-DEPENDENT WEAK-LOCALIZATION MODEL FOR A SUPERLATTICE

被引:20
作者
SZOTT, W [1 ]
JEDRZEJEK, C [1 ]
KIRK, WP [1 ]
机构
[1] JAGIELLONIAN UNIV, DEPT PHYS, PL-31007 KRAKOW, POLAND
关键词
D O I
10.1103/PhysRevB.45.3565
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A tight-binding theory of weak localization in the parallel and vertical conductivity of a semiconductor superlattice is presented. We take into account both the electron wave-function modulation in a superlattice and a spatial distribution of impurities in the potential barriers. These features allow us to perform realistic small-collisional-broadening calculations as quantum corrections to the Boltzmann transport. We obtain the anisotropic-elastic-scattering time, even in the case of pointlike scatterers. The anisotropy of our model differs from that considered by Bhatt, Wolfle, and Ramakrishnan. In particular, the diffusion propagator in the z direction depends on an effective diffusion constant that consists of a coherent band part and an incoherent hoppinglike part.
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页码:3565 / 3575
页数:11
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