HYSTERESIS PREDICTED IN IV CURVE OF HETEROJUNCTION RESONANT TUNNELING DIODES SIMULATED BY A SELF-CONSISTENT QUANTUM METHOD

被引：22

作者：

BERKOWITZ, HL

LUX, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：967 / 970

页数：4

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