INTERFACE MORPHOLOGICAL INSTABILITY IN CZOCHRALSKI SILICON CRYSTAL-GROWTH FROM HEAVILY SB-DOPED MELT

被引：12

作者：

KIM, KM ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 05期

关键词：

D O I：

10.1149/1.2129159

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：875 / 878

页数：4

共 14 条

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[7] CRYSTAL-GROWTH FROM MELT UNDER DESTABILIZING THERMAL GRADIENTS [J].

KIM, KM ;

WITT, AF ;

GATOS, HC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) :1218-&

[8] MORPHOLOGICAL INSTABILITY UNDER CONSTITUTIONAL SUPERCOOLING DURING CRYSTAL-GROWTH OF INSB FROM MELT UNDER STABILIZING THERMAL GRADIENT [J].

KIM, KM .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) :403-413

[9] QUANTITATIVE-ANALYSIS OF EFFECTS OF DESTABILIZING VERTICAL THERMAL GRADIENTS ON CRYSTAL-GROWTH AND SEGREGATION - GA-DOPED GE [J].

KIM, KM ;

WITT, AF ;

LICHTENSTEIGER, M ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :475-480

[10]

KIM KS, UNPUBLISHED

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