BAND OFFSETS FOR PSEUDOMORPHIC INP/GAAS

被引：19

作者：

NOLTE, DD

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,CTR ADV MAT,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.100983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 261

页数：3

共 19 条

[1] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[2] STRAIN EFFECTS IN INGAAS/HAAS SUPERLATTICES [J].

DAHL, DA .

SOLID STATE COMMUNICATIONS, 1987, 61 (12) :825-826

[3]

FRITZ IJ, 1986, APPL PHYS LETT, V48, P24

[4] DEEP-LEVEL IMPURITIES - A POSSIBLE GUIDE TO PREDICTION OF BAND-EDGE DISCONTINUITIES IN SEMICONDUCTOR HETEROJUNCTIONS [J].

LANGER, JM ;

HEINRICH, H .

PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1414-1417

[5] OPTICAL INVESTIGATION OF A NEW TYPE OF VALENCE-BAND CONFIGURATION IN INXGA1-XAS-GAAS STRAINED SUPERLATTICES [J].

MARZIN, JY ;

CHARASSE, MN ;

SERMAGE, B .

PHYSICAL REVIEW B, 1985, 31 (12) :8298-8301

[6] LARGE VALENCE-BAND OFFSET IN STRAINED-LAYER INXGA1-XAS-GAAS QUANTUM-WELLS [J].

MENENDEZ, J ;

PINCZUK, A ;

WERDER, DJ ;

SPUTZ, SK ;

MILLER, RC ;

SIVCO, DL ;

CHO, AY .

PHYSICAL REVIEW B, 1987, 36 (15) :8165-8168

[7] BAND-EDGE HYDROSTATIC DEFORMATION POTENTIALS IN III-V SEMICONDUCTORS [J].

NOLTE, DD ;

WALUKIEWICZ, W ;

HALLER, EE .

PHYSICAL REVIEW LETTERS, 1987, 59 (04) :501-504

[8] DETERMINATION OF CRITICAL LAYER THICKNESS IN INXGA1-XAS GAAS HETEROSTRUCTURES BY X-RAY-DIFFRACTION [J].

ORDERS, PJ ;

USHER, BF .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :980-982

[9] BAND-STRUCTURE ENGINEERING FOR MAXIMAL LIGHT-HOLE BEHAVIOR IN STRAINED QUANTUM-WELL SYSTEMS [J].

OREILLY, EP ;

WITCHLOW, GP .

SOLID STATE COMMUNICATIONS, 1987, 62 (09) :653-656

[10] INXGA1-XAS-INYGA1-YAS STRAINED-LAYER SUPER-LATTICES - A PROPOSAL FOR USEFUL, NEW ELECTRONIC MATERIALS [J].

OSBOURN, GC .

PHYSICAL REVIEW B, 1983, 27 (08) :5126-5128

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