LATTICE MISMATCH ACCOMMODATION AT GESI (111) SI INTERFACES GROWN BY LIQUID-PHASE EPITAXY

Misfit dislocation networks at relaxed GeSi/{111} Si interfaces grown by liquid phase epitaxy from a Bi-Ge-Si solution are characterized. The misfit dislocations are imaged by high resolution transmission electron microscopy and conventional weak-beam dark-field technique. It turns out that networks of partial rather than complete dislocations accommodate the lattice mismatch between GeSi and Si. The formation of these dislocations is discussed with respect to the particular LPE growth conditions.