ON THE GROWTH OF SILVER ON GAAS(001) SURFACES

被引：45

作者：

MASSIES, J

LINH, NT

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 01期

关键词：

D O I：

10.1016/0022-0248(82)90009-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：25 / 38

页数：14

共 35 条

[1] SOLID-STATE EFFECTS IN M4, 5N4, 5N4, 5 AUGER-ELECTRON SPECTRUM OF CADMIUM [J].

AKSELA, S ;

AKSELA, H ;

VUONTISJARVI, M ;

VAYRYNEN, J ;

LAHTEENKORVA, E .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1977, 11 (02) :137-145

[2] RECENT ADVANCES IN EPITAXY [J].

BAUER, E ;

POPPA, H .

THIN SOLID FILMS, 1972, 12 (01) :167-+

[3] AUGER LINE-SHAPE CHANGES IN EPITAXIAL (111)PD-(111)CU FILMS [J].

CHAO, SS ;

KNABBE, EA ;

VOOK, RW .

SURFACE SCIENCE, 1980, 100 (03) :581-589

[4] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].

CHO, AY ;

DERNIER, PD .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332

[5] ENERGIEVERLUSTMESSUNGEN AN SILBER MIT HOHER ENERGIEAUFLOSUNG [J].

DANIELS, J .

ZEITSCHRIFT FUR PHYSIK, 1967, 203 (03) :235-&

[6] ELECTRONIC AND CRYSTALLOGRAPHIC STRUCTURES OF SILVER ADSORBED ON SILICON (111) [J].

DERRIEN, J ;

LELAY, G ;

SALVAN, F .

JOURNAL DE PHYSIQUE LETTRES, 1978, 39 (16) :L287-L290

[7] MOLECULAR-BEAM SYSTEM CONTROLLED BY QUADRUPOLE MASS-SPECTROMETER [J].

ETIENNE, P ;

MASSIES, J ;

LINH, NT .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (11) :1153-1155

[8]

FARROW RFC, 1979, THIN SOLID FILMS, V58, P189, DOI 10.1016/0040-6090(79)90235-9

[9] STRUCTURAL AND ELECTRICAL-PROPERTIES OF EPITAXIAL METAL-FILMS GROWN ON ARGON ION BOMBARDED AND ANNEALED (001)INP [J].

FARROW, RFC ;

CULLIS, AG ;

GRANT, AJ ;

PATTISON, JE .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :292-301

[10] ELECTRONIC-STRUCTURE OF AG ADSORBED ON SI(111) - EXPERIMENT AND THEORY [J].

GASPARD, JP ;

DERRIEN, J ;

CROS, A ;

SALVAN, F .

SURFACE SCIENCE, 1980, 99 (01) :183-191

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