SPECTROSCOPIC TRANSMISSION ELLIPSOMETRY STUDIES OF SEMICONDUCTOR HETEROSTRUCTURES

被引：1

作者：

OZANYAN, KB

HUNDERI, O

机构：

[1] Department of Physics, Norwegian Institute of Technology

来源：

PHYSICA A | 1994年 / 207卷 / 1-3期

关键词：

D O I：

10.1016/0378-4371(94)90404-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ellipsometry is conventionally used in a reflection configuration, which however is not suitable for the case of p-polarization sensitive modes in high-index samples. In this paper we demonstrate that transmission ellipsometry at the Brewster angle of incidence can be a powerful tool for investigating heterostructures and superlattices, provided s-polarized absorption is negligible. Such a geometry combines the possibility of achieving a greater p-polarized component in the sample, the convenience of measuring at higher signal levels and easier treatment of experimental data.

引用

页码：420 / 426

页数：7

共 6 条

[1]

ASPNES DE, 1976, OPTICAL PROPERTIES S, P808

[2]

AZZAM RMA, 1977, ELLIPSOMETRY POLARIZ, P315

[3]

BORN M, PRINCIPLES OPTICS

[4] INFRARED ELLIPSOMETER FOR THE STUDY OF SURFACES, THIN-FILMS, AND SUPERLATTICES [J].

BREMER, J ;

HUNDERI, O ;

KONG, FP ;

SKAULI, T ;

WOLD, E .

APPLIED OPTICS, 1992, 31 (04) :471-478

[5] INTER-SUB-BAND ABSORPTION IN GAAS/ALGAAS SINGLE QUANTUM WELLS [J].

KANE, MJ ;

EMENY, MT ;

APSLEY, N ;

WHITEHOUSE, CR ;

LEE, D .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (07) :722-725

[6]

VASICEK A, 1960, OPTICS THIN FILMS, P140

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