ELECTRICAL-PROPERTIES OF P-TYPE GASE

被引：52

作者：

MANFREDOTTI, C ^{[1
]}

MANCINI, AM ^{[1
]}

MURRI, R ^{[1
]}

RIZZO, A ^{[1
]}

VASENELLI, L ^{[1
]}

机构：

[1] UNIV BARI, IST FIS, I-70124 BARI, ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-BASIC TOPICS IN PHYSICS | 1977年 / 39卷 / 01期

关键词：

D O I：

10.1007/BF02738193

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：257 / 268

页数：12

共 27 条

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[4] BREBNER JL, 1966, P INT C LUMINESCENCE, P1933
[5] MELT GROWTH OF SINGLE-CRYSTAL INGOTS OF GASE BY BRIDGMAN-STOCKBARGERS METHOD
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[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 16 (02) : 183 - &
[6] CARDETTA VL, 1971, CSATAFACM106 REPT
[7] ELECTRICAL RESISTIVITY AND HALL EFFECT OF SINGLE CRYSTALS OF GATE AND GASE
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (OCT) : 1363 - &
[8] THEORY OF LAYER STRUCTURES
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (05) : 839 - &
[9] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES
FIVAZ, R
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[J]. PHYSICAL REVIEW, 1967, 163 (03): : 743 - &
[10] GADZHIEV VA, 1970, FIZ TVERD TELA+, V12, P1061