PREPARATION AND PROPERTIES OF VAPOR-GROWN IN 1-XGAXP

被引：42

作者：

NUESE, CJ

RICHMAN, D

CLOUGH, RB

机构：

来源：

METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期

关键词：

D O I：

10.1007/BF02662737

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：789 / &

共 21 条

[1] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES
COHEN, ML
BERGSTRESSER, TK
[J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +
[2] INTRINSIC ABSORPTION-EDGE SPECTRUM OF GALLIUM PHOSPHIDE
DEAN, PJ
THOMAS, DG
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 690 - &
[3] INTRABAND AND INTERBAND FREE-CARRIER ABSORPTION AND FUNDAMENTAL ABSORPTION EDGE IN N-TYPE INP
DUMKE, WP
LORENZ, MR
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (12): : 4668 - &
[4] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
GERSHENZON, M
LOGAN, RA
NELSON, DF
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
[5] HAKKI BW, 1970, 10 INT C PHYS SEM CA
[6] HILSUM C, 1968, 9 P INT C PHYS SEM, V2, P1214
[7] BAND GAP OF GALLIUM PHOSPHIDE FROM 0 TO 900 DEGREES K AND LIGHT EMISSION FROM DIODES AT HIGH TEMPERATURES
LORENZ, MR
PETTIT, GD
TAYLOR, RC
[J]. PHYSICAL REVIEW, 1968, 171 (03): : 876 - &
[8] LORENZ MR, 1970, 10 INT C PHYS SEM CA
[9] DEPENDENCE OF RECOMBINATION RADIATION ON CURRENT IN CAAS DIODES
MAYBURG, S
BLACK, J
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1521 - &
[10] CONDUCTION BAND MINIMA IN ALAS AND ALSB
MEAD, CA
SPITZER, WC
[J]. PHYSICAL REVIEW LETTERS, 1963, 11 (08) : 358 - &