FABRICATION AND CHARACTERIZATION OF LATERAL FIELD-EMITTER TRIODES

被引:29
作者
KANEMARU, S
ITOH, J
机构
[1] Electrotechnical Laboratory, Tsukuba-Shi, Ibaraki 305
关键词
D O I
10.1109/16.88521
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated a field-emitter triode with tungsten electrodes arranged laterally on a quartz glass substrate by using the photolithography and dry etching techniques. The device consists of an array of 170 field-emitter tips with a 10-mu-m pitch, a columnar gate, and an anode. The emission characteristics followed the Fowler-Nordheim tunneling theory. The mutual conductance was about 0.02-mu-S at an anode voltage of 300 V. We have improved the fabrication process to obtain an emitter with an operating voltage of about 100 V.
引用
收藏
页码:2334 / 2336
页数:3
相关论文
共 6 条
[1]  
ANDERSON WA, 1989, VACUUM MICROELECTRON, P217
[2]  
BUSTA HH, 1989, VACUUM MICROELECTRON, P29
[3]  
CARR WN, 1989, VACUUM MICROELECTRON, P195
[4]  
ITOH J, 1990, J JAPAN SOC APPL PHY, V59, P164
[5]  
ITOH J, 1989, SEP FALL M JAP SOC A, P484
[6]   PHYSICAL-PROPERTIES OF THIN-FILM FIELD-EMISSION CATHODES WITH MOLYBDENUM CONES [J].
SPINDT, CA ;
BRODIE, I ;
HUMPHREY, L ;
WESTERBERG, ER .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (12) :5248-5263