INGAAS/INP QUANTUM WIRES SELECTIVELY GROWN BY CHEMICAL BEAM EPITAXY

被引：9

作者：

NISHIDA, T

SUGIURA, H

NOTOMI, M

TAMAMURA, T

机构：

[1] NTT Optoelectronics Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, 243-11, 3-1 Wakamiya, Morinosato

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 132卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(93)90250-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report InGaAs/InP wire structures as narrow as 15 nm grown by chemical beam epitaxy (CBE) and a very fine SiO2 mask fabricated by electron beam (E-beam) lithography. InGaAs well wires grown along [110] on an InP(001) substrate can be effectively embedded in InP due to {111}B facet growth resulting in strong optical activity. The mask coverage has no influence on the wire structure because of the high-vacuum growth environment in CBE. However, the opening width of the mask causes the thickness and composition of the wires to vary. By taking this variation into account, a blue shift of photoluminescence spectra due to two-dimensional confinement is confirmed for wires narrower than 30 nm.

引用

页码：91 / 98

页数：8

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